238000006011 modification reaction Methods 0.000 description 1.

238000005516 engineering process Methods 0.000 description 1.

230000000977 initiatory Effects 0.000 claims description 3.

230000015654 memory Effects 0.000 title claims abstract description 240.

Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US245786 priority Critical Priority to US08/245,786 priority patent/US6226722B1/en Application filed by International Business Machines Corp filed Critical International Business Machines Corp Priority to PCT/EP1994/004315 priority patent/WO1995032472A1/fr Publication of EP0760133A1 publication Critical patent/EP0760133A1/fr Status Withdrawn legal-status Critical Current Links Original Assignee International Business Machines Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Inventor David James Shippy David Benjamin Shuler Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Withdrawn Application number EP95905594A Other languages German ( de) Google Patents Controleur d'antememoire de niveau 2 et de memoire principale integrees, avec multiples ports d'acces aux donnees Google Patents EP0760133A1 - Controleur d'antememoire de niveau 2 et de memoire principale integrees, avec multiples ports d'acces aux donnees

229910052581 Si3N4 Inorganic materials 0.EP0760133A1 - Controleur d'antememoire de niveau 2 et de memoire principale integrees, avec multiples ports d'acces aux donnees.

239000002356 single layer Substances 0.000 claims description 2.

230000000977 initiatory Effects 0.000 claims description 2.

230000000295 complement Effects 0.000 claims description 7.

229920005591 polysilicon Polymers 0.000 claims abstract description 31.

229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 31.

239000004020 conductor Substances 0.000 claims abstract description 50.

Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US07/361,033 priority Critical patent/US5065362A/en Priority to US361033 priority Application filed by Agiga Tech Inc filed Critical Agiga Tech Inc Publication of EP0474781A1 publication Critical patent/EP0474781A1/fr Publication of EP0474781A4 publication Critical patent/EP0474781A4/en Status Withdrawn legal-status Critical Current Links Original Assignee Agiga Tech Inc Priority date (The priority date is an assumption and is not a legal conclusion. Dimmler Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Withdrawn Application number EP90909888A Other languages German ( de)

Google Patents Memoire vive remanente (nvram) dotee d'une memoire vive statique (sram) et d'un circuit remanent (nv)

Google Patents EP0474781A1 - Memoire vive remanente (nvram) dotee d'une memoire vive statique (sram) et d'un circuit remanent (nv) EP0474781A1 - Memoire vive remanente (nvram) dotee d'une memoire vive statique (sram) et d'un circuit remanent (nv)

Les memoires ram